 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2 - 50 GHz Distributed Amplifier Technical Data HMMC-5025 Features * Frequency Range: 2 - 50 GHz * Small Signal Gain: 8.5 dB * P-1dB @ 40 GHz: 12 dBm * Noise Figure: < 6 dB @ 2 - 35 GHz < 10 dB @ 35 - 50 GHz * Return Loss: In/Out: < -10 dB Description The HMMC-5025 was designed as a generic wide band distributed amplifier, covering the frequency span 2 - 50 GHz. It consists of seven stages. Each stage is made up of two cascoded FETs with gate peripheries of 48 mm per FET. Both input and output ports were designed to provide 50 ohm terminations. Bonding pads are provided in the layout to allow amplifier operation at frequencies lower than 2 GHz by means of external circuit components. The HMMC-5025 is typically biased at VDD = 5 volts and IDD = 75 mA. The second gate is internally biased by means of a voltage divider network and an a.c. ground. Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1720 x 920 m (67.7 x 36.2 mils) 10 m ( 0.4 mils) 127 15 m (5.0 0.6 mils) 80 x 80 m (3.2 x 3.2 mils) Absolute Maximum Ratings[1] Symbol VDD IDD VG1 VG2 PDC Pin Tch Tcase TSTG Tmax Parameters/Conditions Positive Drain Voltage Total Drain Current First Gate Voltage Second Gate Voltage DC Power Dissipation CW Input Power Operating Channel Temp. Operating Case Temp. Storage Temperature Maximum Assembly Temp. (for 60 seconds maximum) Units V mA V mA watts dBm C C C C -55 -65 +165 +300 -3.5 -3.0 Min. Max. 7.0 170 0 +3.0 1.2 20 +150 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. TA = 25C except for Tch, TSTG, and Tmax. 5965-5446E 6-40 HMMC-5025 DC Specifications/Physical Properties [1] Symbol IDSS Vp VG2 IDSOFF(VG1) IDSOFF(VG2) ch-bs Parameters and Test Conditions Saturated Drain Current (VDD = 5.0 V, VG1 = 0.0 V, VG2 = open circuit) First Gate Pinch-off Voltage (VDD = 5.0 V, IDD = 15 mA, VG2 = open circuit) Second Gate Self-Bias Voltage (VDD = 5.0 V, IDD = 75 mA) First Gate Pinch-off Current (VDD = 5.0 V, VG1 = -3.5 V, VG2 = open circuit) Second Gate Pinch-off Current (VDD = 5.0 V, IDD = 75 mA, VG2 = -3.5 V) Thermal Resistance (Tbackside = 25C) Units mA V V mA mA C/W Min. 130 -1.7 2 6 10 63 10 Typ. 150 Max. 170 -0.5 Note: 1. Measured in wafer form with Tchuck = 25C. (Except ch-bs.) HMMC-5025 RF Specifications[1], VDD = 5.0 V, IDD(Q) = 75 mA, Z in = Z o = 50 Symbol BW S21 S21 RLin RLout S12 P-1dB Psat H2 H3 NF Parameters and Test Conditions Guaranteed Bandwidth[2] Small Signal Gain Small Signal Gain Flatness Input Return Loss Output Return Loss Reverse Isolation Output Power @ 1dB Gain Compression @ 40 GHz Saturated Output Power @ 40 GHz Second Harmonic Power Level (2 < o < 26) Po(o) = 10 dBm Third Harmonic Power Level (2 < o < 20) Po(o) = 10 dBm Noise Figure (2 - 35 GHz) Noise Figure (35 - 50 GHz) Units GHz dB dB dB dB dB dBm dBm dBc dBc dB Min. 2 7.0 10 10 20 Typ. 8.5 0.75 15 15 30 12 16 -35 -25 5.0 7.0 Max. 50 1.5 Notes: 1. Small-signal data measured in wafer form with Tchuck = 25C. Harmonic data measured on individual devices mounted in a microcircuit package at TA = 25C. 2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry. 6-41 HMMC-5025 Applications The HMMC-5025 traveling wave amplifier is designed for use as a general purpose wideband power stage in communication systems and microwave instrumentation. It is ideally suited for broadband applications requiring a flat gain response and excellent port matches over a 2 to 50 GHz frequency range. Dynamic gain control and low-frequency extension capabilities are designed into these devices. achieve these drain current levels, VG1 is typically biased between -0.2V and -0.6 V. No other bias supplies or connections to the device are required for 2 to 50 GHz operation. The gate voltage (VG1) should be applied prior to the drain voltage (VDD) during power up and removed after the drain voltage during power down. The auxiliary gate and drain contacts are used only for lowfrequency performance extension below 1.0 GHz. When used, these contacts must be AC coupled only. (Do not attempt to apply bias to these pads.) The second gate (VG2) can be used to obtain 30 dB (typical) dynamic gain control. For normal operation, no external bias is required on this contact. Assembly Techniques Solder die-attach using a fluxless AuSu solder preform is the recommended assembly method. Gold thermosonic wedge bonding with 0.7 mil diameter Au wire is recommended for all bonds. Tool force should be 22 1 gram, stage temperature should be 150 2 C, and ultrasonic power and duration should be 64 1 dB and 76 8 msec, respectively. The bonding pad and chip backside metallization is gold. For more detailed information see HP application note #999 "GaAs MMIC Assembly and Handling Guidelines." GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices. Biasing and Operation These amplifiers are biased with a single positive drain supply (VDD) and a single negative gate supply (VG1). The recommended bias conditions for best performance for the HMMC-5025 are VDD = 5.0 V, IDD = 75 mA. To Low Frequency Drain Bias Extension Seven Identical Stages RF OUTPUT 15 15 50 1.5 8.5 470 8.5 340 Second Gate Bias RF INPUT 50 350 GND Figure 1. HMMC-5025 Schematic. Gate Bias 9.2 6 Low Frequency Extension 6-42 Figure 2. HMMC-5025 Bond Pad Locations. 6-43 Figure 3. HMMC-5025 Assembly Diagram. HMMC-5025 Typical Performance 12 SMALL-SIGNAL GAIN (dB) VDD = 5.0 V, IDD = 75 mA[1] Gain 10 20 OUTPUT RETURN LOSS (dB) REVERSE ISOLATION (dB) INPUT RETURN LOSS (dB) 10 15 20 25 30 35 Input 40 2 60 2 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 40 45 45 2 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) Output 10 15 20 25 30 35 10 5 VDD = 5.0 V, IDD = 75 mA[1] 5 8 30 6 Isolation 40 4 50 Figure 4. Typical Gain and Reverse Isolation vs. Frequency. Figure 5. Typical Input and Output Return Loss vs. Frequency. Note: 1. Data obtained from on-wafer measurements. Tchuck = 25C. 6-44 HMMC-5025 Typical Scattering Parameters[1], (Tchuck = 25C, VDD = 5.0 V, IDD = 75 mA, Zin = Zo = 50 Freq. S11 S21 GHz dB Mag Ang dB Mag Ang 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 -24.6 -29.7 -28.9 -27.0 -25.8 -25.2 -25.4 -26.0 -27.4 -29.4 -31.7 -33.0 -31.4 -29.1 -27.0 -25.4 -24.5 -24.1 -24.4 -25.0 -25.6 -27.7 -30.9 -38.4 -40.1 -30.9 -26.0 -23.1 -21.0 -19.8 -18.9 -18.6 -18.5 -19.0 -20.0 -21.5 -24.0 -27.6 -32.9 -30.3 -25.5 -22.2 -20.1 -19.0 -18.6 -18.3 -18.8 -19.3 -20.3 0.059 0.033 0.036 0.045 0.052 0.055 0.054 0.050 0.043 0.034 0.026 0.022 0.027 0.035 0.045 0.053 0.060 0.062 0.061 0.056 0.052 0.041 0.028 0.012 0.010 0.029 0.050 0.070 0.089 0.102 0.114 0.117 0.118 0.112 0.100 0.084 0.063 0.042 0.023 0.031 0.053 0.078 0.099 0.112 0.117 0.121 0.115 0.108 0.096 -150.2 147.5 89.0 56.2 32.6 12.7 -6.3 -25.3 -46.3 -70.4 -102.9 -145.8 168.6 136.8 113.4 95.4 77.9 62.1 48.2 37.0 22.6 7.2 -8.2 -39.5 -169.3 156.0 138.6 122.8 110.2 95.3 82.3 70.4 58.6 46.2 35.6 26.4 18.8 18.9 46.7 99.2 107.1 102.7 94.4 85.3 76.5 69.8 62.5 59.9 58.9 -52.0 -49.1 -47.1 -45.5 -44.2 -43.3 -42.6 -42.1 -41.7 -41.4 -40.9 -40.7 -40.3 -39.7 -39.0 -38.4 -37.7 -37.1 -36.3 -35.3 -35.1 -34.7 -34.4 -34.3 -33.9 -33.7 -33.7 -33.4 -33.3 -32.9 -32.5 -32.3 -32.3 -31.9 -31.6 -31.5 -31.5 -31.5 -31.4 -31.2 -31.0 -31.4 -31.1 -31.3 -30.5 -30.6 -30.7 -30.5 -30.3 0.0025 0.0035 0.0044 0.0053 0.0061 0.0068 0.0074 0.0078 0.0083 0.0085 0.0090 0.0093 0.0097 0.0104 0.0112 0.0120 0.0131 0.0140 0.0153 0.0172 0.0176 0.0184 0.0191 0.0194 0.0202 0.0206 0.0206 0.0213 0.0216 0.0228 0.0236 0.0244 0.0244 0.0254 0.0264 0.0266 0.0267 0.0266 0.0270 0.0276 0.0282 0.0270 0.0280 0.0272 0.0297 0.0297 0.0293 0.0300 0.0307 dB 8.5 8.4 8.4 8.4 8.4 8.5 8.6 8.8 8.9 9.0 9.1 9.2 9.2 9.2 9.2 9.2 9.1 9.1 9.0 9.0 8.9 8.9 8.9 8.9 8.9 8.9 8.9 8.9 8.9 8.9 8.8 8.8 8.8 8.8 8.8 8.7 8.7 8.7 8.7 8.6 8.6 8.6 8.6 8.5 8.5 8.6 8.6 8.6 8.6 S12 Mag 2.660 2.630 2.630 2.629 2.643 2.668 2.705 2.743 2.787 2.823 2.853 2.874 2.891 2.891 2.884 2.870 2.853 2.836 2.819 2.806 2.798 2.796 2.789 2.789 2.789 2.794 2.795 2.787 2.780 2.772 2.768 2.762 2.752 2.747 2.741 2.735 2.728 2.723 2.711 2.703 2.695 2.689 2.679 2.672 2.676 2.686 2.689 2.691 2.677 Ang 147.8 139.6 129.8 119.5 108.9 98.1 86.9 75.5 63.7 51.6 39.3 26.9 14.3 1.8 -10.8 -23.3 -35.7 -48.1 -60.3 -72.6 -84.7 -97.1 -109.5 -121.9 -134.5 -147.2 -160.1 -173.1 174.0 160.9 147.8 134.5 121.2 107.8 94.4 80.7 67.0 53.0 39.0 24.8 10.5 -4.0 -18.1 -33.4 -48.5 -64.0 -79.8 -96.1 -293.0 dB -26.1 -33.8 -30.1 -24.6 -20.8 -18.4 -16.7 -15.6 -15.0 -14.8 -14.9 -15.4 -16.3 -17.6 -19.5 -22.2 -26.7 -35.6 -35.3 -27.0 -23.2 -21.0 -19.4 -18.6 -18.2 -18.2 -18.4 -18.8 -19.6 -20.5 -21.3 -22.4 -23.0 -23.5 -23.7 -24.4 -25.4 -27.1 -30.4 -38.1 -32.6 -26.2 -22.4 -20.2 -18.8 -18.0 -18.3 -19.5 -21.7 S22 Mag 0.049 0.020 0.031 0.059 0.091 0.121 0.147 0.166 0.178 0.182 0.179 0.169 0.153 0.131 0.106 0.077 0.046 0.017 0.017 0.045 0.069 0.089 0.107 0.118 0.124 0.124 0.120 0.115 0.105 0.095 0.086 0.076 0.071 0.067 0.066 0.060 0.054 0.044 0.030 0.012 0.023 0.049 0.076 0.098 0.115 0.126 0.122 0.106 0.082 Ang -64.0 -23.6 43.9 55.9 52.1 43.8 33.4 22.3 10.7 -0.9 -12.6 -24.2 -35.7 -47.3 -59.3 -72.0 -86.1 -114.9 107.2 80.0 66.2 54.9 44.2 33.6 24.2 15.5 7.7 2.1 -3.4 -7.5 -9.1 -6.4 -4.7 -3.5 -2.5 -4.3 -8.9 -11.8 -9.1 18.9 93.1 94.9 86.4 75.3 61.6 48.2 28.8 6.1 -22.7 -110.2 -130.2 -146.4 -161.6 -176.8 169.3 155.6 143.8 132.1 121.9 112.3 104.5 95.4 88.5 80.5 71.9 62.9 53.8 44.3 32.7 19.5 8.9 -2.8 -14.7 -25.3 -37.0 -48.5 -58.3 -71.3 -81.1 -93.6 -105.4 -120.3 -132.8 -146.2 -161.5 -175.1 171.1 157.6 140.9 125.0 115.6 101.4 87.2 72.1 49.9 37.8 20.0 2.7 Note: 1. Data obtained from on-wafer measurements. 6-45 HMMC-5025 Typical Performance 13 SMALL-SIGNAL GAIN, S21 (dB) VDD = 5.0 V, IDD [@TA = 25C] = 75 mA .029 dB/C TA SMALL-SIGNAL GAIN, S21 (dB) 20 VDD = 5.0 V, VG1 0.66 V 12 11 10 9 8 7 6 5 4 .019 dB/C 3 2 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) .039 dB/C -55C -25C 0 C +25C +55C +85C +100C 10 0 -10 VG2 = +2.0 V, IDD = 75 mA VG2 = -1.0 V, IDD = 59 mA VG2 = -1.5 V, IDD = 47 mA VG2 = -2.0 V, IDD = 34 mA VG2 = -2.5 V, IDD = 24 mA VG2 = -3.0 V, IDD = 16 mA -20 -30 2 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) Figure 6. Typical Small-Signal Gain vs. Temperature. Figure 7. Typical Gain vs. Second Gate Control Voltage. 18 16 OUTPUT POWER (dBm) VDD = 5.0 V, IDD (Q) = 75 mA Psat HARMONICS (dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 VDD = 5.0 V, IDD (Q) = 75 mA 8 14 12 10 6 P-1dB 3rd Harmonic 2nd Harmonic -55 -60 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNDAMENTAL FREQUENCY, fo (GHz) 4 2 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) Figure 8. Typical 1 dB Gain Compression and Saturated Output Power vs. Frequency. 13 11 9 NOISE FIGURE (dB) ASSOCIATED GAIN (dB) Figure 9. Typical Second and Third Harmonics vs. Fundamental Frequency at POUT = 10 dBm. 7 5 6 5 4 3 2 1 2 4 6 8 10 12 14 16 18 20 22 24 26.5 FREQUENCY (GHz) Nominal Bias: VDD = 5.0 V, IDD = 75 mA Optimal NF Bias: VDD = 2.25 V, IDD = 26 mA Figure 10. Typical Noise Figure Performance. Note: 1. All data measured on individual devices mounted in an HP83040 Series Modular Microcircuit Package @ TA = 25C (except where noted). This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local HP sales representative. 6-46 |
Price & Availability of HMMC-5025
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |